 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PD - 97125 IRF1018EPBF IRF1018ESPbF IRF1018ESLPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET(R) Power MOSFET D G S VDSS RDS(on) typ. max. ID 60V 7.1m: 8.4m: 79A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability D D D G D S G D S G D S TO-220AB IRF1018EPBF D2Pak IRF1018ESPbF TO-262 IRF1018ESLPbF G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery e Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw k Max. 79 56 315 110 0.76 20 21 -55 to + 175 300 10lbxin (1.1Nxm) 88 47 11 Units A W W/C V V/ns C Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy d Avalanche Current c Repetitive Avalanche Energy f mJ A mJ Thermal Resistance Symbol RJC RCS RJA RJA Parameter Junction-to-Case j Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 j Junction-to-Ambient (PCB Mount) , D Pak ij 2 Typ. --- 0.50 --- --- Max. 1.32 --- 62 40 Units C/W www.irf.com 1 2/28/08 IRF1018E/S/SLPbF Static @ TJ = 25C (unless otherwise specified) Symbol V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 60 --- --- --- 0.073 --- --- 7.1 8.4 2.0 --- 4.0 --- --- 20 --- --- 250 --- --- 100 --- --- -100 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 5mAc m VGS = 10V, ID = 47A f V VDS = VGS, ID = 100A A VDS = 60V, VGS = 0V VDS = 48V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync RG(int) td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Internal Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units 110 --- --- --- --- --- Conditions VDS = 50V, ID = 47A ID = 47A VDS = 30V VGS = 10V f ID = 47A, VDS =0V, VGS = 10V VDD = 39V ID = 47A RG = 10 VGS = 10V f VGS = 0V VDS = 50V = 1.0MHz VGS = 0V, VDS = 0V to 60V h VGS = 0V, VDS = 0V to 60V g --- 46 10 12 34 0.73 13 35 55 46 2290 270 130 390 630 --- 69 --- --- --- --- --- --- --- --- --- --- --- --- --- S nC --- --- --- --- --- --- --- Effective Output Capacitance (Energy Related)h --- --- Effective Output Capacitance (Time Related)g ns pF Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) c Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- 79 315 A Conditions MOSFET symbol showing the integral reverse G D S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 47A, VGS = 0V f VR = 51V, --- 26 39 ns TJ = 25C IF = 47A TJ = 125C --- 31 47 di/dt = 100A/s f --- 24 36 nC TJ = 25C TJ = 125C --- 35 53 --- 1.8 --- A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.08mH RG = 25, IAS = 47A, VGS =10V. Part not recommended for use above this value. ISD 47A, di/dt 1668A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as When mounted on 1" square PCB (FR-4 or G-10 Material). For recom R is measured at TJ approximately 90C. This is only applied to TO-220 Coss while VDS is rising from 0 to 80% VDSS. mended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRF1018E/S/SLPbF 1000 TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V 1000 TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) BOTTOM 100 BOTTOM 4.5V 10 10 4.5V 60s PULSE WIDTH Tj = 25C 1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 1 0.1 1 60s PULSE WIDTH Tj = 175C 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 RDS(on) , Drain-to-Source On Resistance (Normalized) Fig 2. Typical Output Characteristics 2.5 ID = 47A 2.0 VGS = 10V ID, Drain-to-Source Current (A) 100 TJ = 175C 10 1.5 1 TJ = 25C VDS = 25V 1.0 60s PULSE WIDTH 0.1 2 3 4 5 6 7 8 9 0.5 -60 -40 -20 0 20 40 60 80 100120140160180 TJ , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Fig 4. Normalized On-Resistance vs. Temperature 16 VGS, Gate-to-Source Voltage (V) ID= 47A VDS = 48V VDS = 30V VDS = 12V 3000 C, Capacitance (pF) Ciss 2000 12 8 1000 Coss Crss 1 10 VDS , Drain-to-Source Voltage (V) 100 4 0 0 0 10 20 30 40 50 60 QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage www.irf.com 3 IRF1018E/S/SLPbF 1000 10000 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) ISD, Reverse Drain Current (A) 100 1000 TJ = 175C 100 1msec 100sec 10 TJ = 25C 10 10msec 1 Tc = 25C Tj = 175C Single Pulse 0.1 1 1 VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 VSD , Source-to-Drain Voltage (V) DC 10 100 0.1 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 80 Fig 8. Maximum Safe Operating Area V(BR)DSS, Drain-to-Source Breakdown Voltage (V) 80 Id = 5mA ID , Drain Current (A) 60 75 40 70 20 65 0 25 50 75 100 125 150 175 60 -60 -40 -20 0 20 40 60 80 100120140160180 TJ , Temperature ( C ) TC , CaseTemperature (C) Fig 9. Maximum Drain Current vs. Case Temperature 0.8 Fig 10. Drain-to-Source Breakdown Voltage 400 EAS, Single Pulse Avalanche Energy (mJ) 350 300 250 200 150 100 50 0 0.6 ID 5.3A 11A BOTTOM 47A TOP Energy (J) 0.4 0.2 0.0 0 10 20 30 40 50 60 25 50 75 100 125 150 175 VDS, Drain-to-Source Voltage (V) Starting TJ, Junction Temperature (C) 4 Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy vs. DrainCurrent www.irf.com IRF1018E/S/SLPbF 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 J J 1 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 C 4 2 3 4 0.01 Ci= i/Ri Ci i/Ri Ri (C/W) 0.026741 0.28078 0.606685 0.406128 (sec) 0.000007 0.000091 0.000843 0.005884 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse 0.01 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) Avalanche Current (A) 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs.Pulsewidth 100 EAR , Avalanche Energy (mJ) 80 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 47A 60 40 20 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 175 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (C) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 15. Maximum Avalanche Energy vs. Temperature www.irf.com 5 IRF1018E/S/SLPbF 4.5 ID = 1.0A 14 12 10 IRR (A) VGS(th) Gate threshold Voltage (V) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 ID = 1.0mA ID = 250A ID = 100A IF = 32A VR = 51V TJ = 25C TJ = 125C 8 6 4 2 0 0 200 400 600 800 1000 diF /dt (A/s) 100 125 150 175 TJ , Temperature ( C ) Fig 16. Threshold Voltage vs. Temperature 14 12 10 IRR (A) Fig. 17 - Typical Recovery Current vs. dif/dt 320 IF = 32A VR = 51V TJ = 25C TJ = 125C IF = 47A VR = 51V TJ = 25C TJ = 125C QRR (A) 280 240 200 160 120 80 40 0 8 6 4 2 0 0 200 400 600 800 1000 diF /dt (A/s) 0 200 400 600 800 1000 diF /dt (A/s) Fig. 18 - Typical Recovery Current vs. dif/dt 320 280 240 200 QRR (A) Fig. 19 - Typical Stored Charge vs. dif/dt IF = 47A VR = 51V TJ = 25C TJ = 125C 160 120 80 40 0 0 200 400 600 800 1000 diF /dt (A/s) 6 Fig. 20 - Typical Stored Charge vs. dif/dt www.irf.com IRF1018E/S/SLPbF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - - + RG * * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD ** + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel *** VGS = 5V for Logic Level Devices Fig 21. Diode Reverse Recovery Test Circuit for HEXFET(R) Power MOSFETs V(BR)DSS 15V tp DRIVER VDS L RG VGS 20V D.U.T IAS tp + V - DD A 0.01 I AS Fig 22a. Unclamped Inductive Test Circuit RD Fig 22b. Unclamped Inductive Waveforms VDS VGS RG 10V Pulse Width 1 s Duty Factor 0.1 % 90% D.U.T. + VDS -VDD 10% VGS td(on) tr td(off) tf Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Id Vds Vgs L 0 DUT 20K 1K S VCC Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 24a. Gate Charge Test Circuit www.irf.com Fig 24b. Gate Charge Waveform 7 IRF1018E/S/SLPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF 1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 IN T HE AS S EMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead - Free" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMB ER DAT E CODE YEAR 0 = 2000 WEEK 19 LINE C TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com IRF1018E/S/SLPbF TO-262 Package Outline (Dimensions are shown in millimeters (inches)) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INT ERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C OR INT ERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE P = DES IGNATES LEAD-FREE PRODUCT (OPT IONAL) YEAR 7 = 1997 WEEK 19 A = AS S EMBLY S ITE CODE Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 9 IRF1018E/S/SLPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches)) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L PART NUMBER F530S DAT E CODE T HIS IS AN IRF530S WIT H LOT CODE For GB Production 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO LOT CODE Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 10 www.irf.com IRF1018E/S/SLPbF D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.2/08 www.irf.com 11 |
Price & Availability of IRF1018EPBF
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |